Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
22 A
Maksimum Tahliye Kaynağı Gerilimi
150 V
Series
PowerTrench
Paket Tipi
Power 56
Montaj Tipi
Yüzeye Monte
Pim Sayısı
8
Maksimum Tahliye Kaynağı Direnci
94 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
104 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-25 V, +25 V
Genişlik
5.85mm
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
5mm
Vgs'de Tipik Kapak Şarjı
10 V'de 45 nC
Maksimum Çalışma Sıcaklığı
+150°C
Yükseklik
1.05mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
622,75 TL
124,55 TL Each (In a Pack of 5) (KDV Hariç)
747,30 TL
149,46 TL Each (In a Pack of 5) KDV Dahil
Standart
5
622,75 TL
124,55 TL Each (In a Pack of 5) (KDV Hariç)
747,30 TL
149,46 TL Each (In a Pack of 5) KDV Dahil
Standart
5
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Miktar | Birim Fiyat | Per Paket |
---|---|---|
5 - 45 | 124,55 TL | 622,75 TL |
50 - 95 | 107,378 TL | 536,89 TL |
100+ | 93,068 TL | 465,34 TL |
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
22 A
Maksimum Tahliye Kaynağı Gerilimi
150 V
Series
PowerTrench
Paket Tipi
Power 56
Montaj Tipi
Yüzeye Monte
Pim Sayısı
8
Maksimum Tahliye Kaynağı Direnci
94 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
104 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-25 V, +25 V
Genişlik
5.85mm
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
5mm
Vgs'de Tipik Kapak Şarjı
10 V'de 45 nC
Maksimum Çalışma Sıcaklığı
+150°C
Yükseklik
1.05mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.