ON Semiconductor FDN338P P-Kanallı Si MOSFET Transistör, 1,6 A, 20 V, 3-Pinli SOT-23

RS Stok Numarası: 671-0438Marka: onsemiÜretici Parça Numarası: FDN338P
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

1,6 A

Maksimum Tahliye Kaynağı Gerilimi

20 V

Series

PowerTrench

Paket Tipi

SOT-23

Montaj Tipi

Yüzeye Monte

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

115 mΩ

Kanal Modu

Artırma

Maksimum Kapı Eşiği Gerilimi

1.5V

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

500 mW

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-8 V, +8 V

Vgs'de Tipik Kapak Şarjı

4,5 V'de 4,4 nC

Genişlik

1.4mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Uzunluk

2.92mm

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

0.94mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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İlginizi çekebilir
Stok bilgileri geçici olarak kullanılamıyor.

151,74 TL

15,174 TL Each (In a Pack of 10) (KDV Hariç)

182,09 TL

18,209 TL Each (In a Pack of 10) KDV Dahil

ON Semiconductor FDN338P P-Kanallı Si MOSFET Transistör, 1,6 A, 20 V, 3-Pinli SOT-23
Paketlenme türü seçiniz
sticker-359

151,74 TL

15,174 TL Each (In a Pack of 10) (KDV Hariç)

182,09 TL

18,209 TL Each (In a Pack of 10) KDV Dahil

ON Semiconductor FDN338P P-Kanallı Si MOSFET Transistör, 1,6 A, 20 V, 3-Pinli SOT-23
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz
sticker-359

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

MiktarBirim FiyatPer Paket
10 - 4015,174 TL151,74 TL
50 - 908,262 TL82,62 TL
100 - 2406,318 TL63,18 TL
250+5,346 TL53,46 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
İlginizi çekebilir

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

1,6 A

Maksimum Tahliye Kaynağı Gerilimi

20 V

Series

PowerTrench

Paket Tipi

SOT-23

Montaj Tipi

Yüzeye Monte

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

115 mΩ

Kanal Modu

Artırma

Maksimum Kapı Eşiği Gerilimi

1.5V

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

500 mW

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-8 V, +8 V

Vgs'de Tipik Kapak Şarjı

4,5 V'de 4,4 nC

Genişlik

1.4mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Uzunluk

2.92mm

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

0.94mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
İlginizi çekebilir