ON Semiconductor FDP10N60NZ N-Kanallı Si MOSFET Transistör, 10 A, 600 V, 3-Pinli TO-220

RS Stok Numarası: 759-9166PMarka: onsemiÜretici Parça Numarası: FDP10N60NZ
brand-logo

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N

Maksimum Sürekli Tahliye Akımı

10 A

Maksimum Tahliye Kaynağı Gerilimi

600 V

Paket Tipi

TO-220

Montaj Tipi

Açık Delik

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

750 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

3V

Maksimum Güç Kaybı

185 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Genişlik

4.9mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+150°C

Vgs'de Tipik Kapak Şarjı

10 V'de 23 nC

Uzunluk

10.36mm

Yükseklik

16.07mm

Series

UniFET

Minimum Çalışma Sıcaklığı

-55°C

Menşe

China

Ürün Ayrıntıları

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

211,70 TL

105,85 TL Each (Supplied in a Tube) (KDV Hariç)

254,04 TL

127,02 TL Each (Supplied in a Tube) KDV Dahil

ON Semiconductor FDP10N60NZ N-Kanallı Si MOSFET Transistör, 10 A, 600 V, 3-Pinli TO-220
Paketlenme türü seçiniz

211,70 TL

105,85 TL Each (Supplied in a Tube) (KDV Hariç)

254,04 TL

127,02 TL Each (Supplied in a Tube) KDV Dahil

ON Semiconductor FDP10N60NZ N-Kanallı Si MOSFET Transistör, 10 A, 600 V, 3-Pinli TO-220

Stok bilgileri geçici olarak kullanılamıyor.

Paketlenme türü seçiniz

Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N

Maksimum Sürekli Tahliye Akımı

10 A

Maksimum Tahliye Kaynağı Gerilimi

600 V

Paket Tipi

TO-220

Montaj Tipi

Açık Delik

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

750 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

3V

Maksimum Güç Kaybı

185 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Genişlik

4.9mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+150°C

Vgs'de Tipik Kapak Şarjı

10 V'de 23 nC

Uzunluk

10.36mm

Yükseklik

16.07mm

Series

UniFET

Minimum Çalışma Sıcaklığı

-55°C

Menşe

China

Ürün Ayrıntıları

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more