Site Bakımı

Temel bakım nedeniyle web sitesi 10 Mayıs Cumartesi günü 06:00'dan 10:00'a kadar kullanılamayacaktır. Oluşabilecek bir rahatsızlıktan dolayı özür dileriz.

ON Semiconductor FDS4559 İkili N/P-Kanallı Si MOSFET Transistör, 3,5 A, 4,5 A, 60 V, 8-Pinli SOIC

RS Stok Numarası: 166-3247Marka: onsemiÜretici Parça Numarası: FDS4559
brand-logo

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

3,5 A, 4,5 A

Maksimum Tahliye Kaynağı Gerilimi

60 V

Seri

PowerTrench

Paket Tipi

SOIC

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

55 mΩ, 105 mΩ

Kanal Modu

Artırma

Maksimum Güç Kaybı

2 W

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-20 V, +20 V

Yonga Başına Eleman Sayısı

2

Genişlik

4mm

Uzunluk

5mm

Vgs'de Tipik Kapak Şarjı

10 V'de 12,5 nC, 10 V'de 15 nC

Transistör Malzemesi

Si

Maksimum Çalışma Sıcaklığı

+175°C

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

1.5mm

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stok bilgileri geçici olarak kullanılamıyor.

38.350,00 TL

15,34 TL Each (On a Reel of 2500) (KDV Hariç)

46.020,00 TL

18,408 TL Each (On a Reel of 2500) KDV Dahil

ON Semiconductor FDS4559 İkili N/P-Kanallı Si MOSFET Transistör, 3,5 A, 4,5 A, 60 V, 8-Pinli SOIC

38.350,00 TL

15,34 TL Each (On a Reel of 2500) (KDV Hariç)

46.020,00 TL

18,408 TL Each (On a Reel of 2500) KDV Dahil

ON Semiconductor FDS4559 İkili N/P-Kanallı Si MOSFET Transistör, 3,5 A, 4,5 A, 60 V, 8-Pinli SOIC
Stok bilgileri geçici olarak kullanılamıyor.

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

3,5 A, 4,5 A

Maksimum Tahliye Kaynağı Gerilimi

60 V

Seri

PowerTrench

Paket Tipi

SOIC

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

55 mΩ, 105 mΩ

Kanal Modu

Artırma

Maksimum Güç Kaybı

2 W

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-20 V, +20 V

Yonga Başına Eleman Sayısı

2

Genişlik

4mm

Uzunluk

5mm

Vgs'de Tipik Kapak Şarjı

10 V'de 12,5 nC, 10 V'de 15 nC

Transistör Malzemesi

Si

Maksimum Çalışma Sıcaklığı

+175°C

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

1.5mm

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more