Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
8,2 A
Maksimum Tahliye Kaynağı Gerilimi
40 V
Series
PowerTrench
Paket Tipi
SOIC
Montaj Tipi
Yüzeye Monte
Pim Sayısı
8
Maksimum Tahliye Kaynağı Direnci
27 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
1V
Maksimum Güç Kaybı
2,5 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
5 V'de 19 nC
Genişlik
4mm
Maksimum Çalışma Sıcaklığı
+150°C
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
5mm
Yükseklik
1.5mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
164,14 TL
32,828 TL Each (In a Pack of 5) (KDV Hariç)
196,97 TL
39,394 TL Each (In a Pack of 5) KDV Dahil
Standart
5

164,14 TL
32,828 TL Each (In a Pack of 5) (KDV Hariç)
196,97 TL
39,394 TL Each (In a Pack of 5) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
5

Stok bilgileri geçici olarak kullanılamıyor.
Miktar | Birim Fiyat | Per Paket |
---|---|---|
5 - 45 | 32,828 TL | 164,14 TL |
50 - 95 | 28,304 TL | 141,52 TL |
100 - 495 | 24,592 TL | 122,96 TL |
500 - 995 | 21,576 TL | 107,88 TL |
1000+ | 19,604 TL | 98,02 TL |
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
8,2 A
Maksimum Tahliye Kaynağı Gerilimi
40 V
Series
PowerTrench
Paket Tipi
SOIC
Montaj Tipi
Yüzeye Monte
Pim Sayısı
8
Maksimum Tahliye Kaynağı Direnci
27 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
1V
Maksimum Güç Kaybı
2,5 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
5 V'de 19 nC
Genişlik
4mm
Maksimum Çalışma Sıcaklığı
+150°C
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
5mm
Yükseklik
1.5mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.