ON Semiconductor FDS4935BZ İkili P-Kanallı Si MOSFET Transistör, 6,9 A, 30 V, 8-Pinli SOIC

RS Stok Numarası: 671-0536PMarka: onsemiÜretici Parça Numarası: FDS4935BZ
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

6,9 A

Maksimum Tahliye Kaynağı Gerilimi

30 V

Paket Tipi

SOIC

Series

PowerTrench

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

22 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

1,6 W

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

2

Uzunluk

5mm

Maksimum Çalışma Sıcaklığı

+150°C

Vgs'de Tipik Kapak Şarjı

10 V'de 29 nC

Genişlik

4mm

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

1.5mm

Ürün Ayrıntıları

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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İlginizi çekebilir
Stok bilgileri geçici olarak kullanılamıyor.

853,20 TL

34,128 TL Each (Supplied on a Reel) (KDV Hariç)

1.023,84 TL

40,954 TL Each (Supplied on a Reel) KDV Dahil

ON Semiconductor FDS4935BZ İkili P-Kanallı Si MOSFET Transistör, 6,9 A, 30 V, 8-Pinli SOIC
Paketlenme türü seçiniz
sticker-359

853,20 TL

34,128 TL Each (Supplied on a Reel) (KDV Hariç)

1.023,84 TL

40,954 TL Each (Supplied on a Reel) KDV Dahil

ON Semiconductor FDS4935BZ İkili P-Kanallı Si MOSFET Transistör, 6,9 A, 30 V, 8-Pinli SOIC
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz
sticker-359

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

MiktarBirim FiyatPer Makara
25 - 9534,128 TL170,64 TL
100 - 24522,572 TL112,86 TL
250 - 49520,52 TL102,60 TL
500+18,792 TL93,96 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
İlginizi çekebilir

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

6,9 A

Maksimum Tahliye Kaynağı Gerilimi

30 V

Paket Tipi

SOIC

Series

PowerTrench

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

22 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

1,6 W

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

2

Uzunluk

5mm

Maksimum Çalışma Sıcaklığı

+150°C

Vgs'de Tipik Kapak Şarjı

10 V'de 29 nC

Genişlik

4mm

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

1.5mm

Ürün Ayrıntıları

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
İlginizi çekebilir