ON Semiconductor FDV303N N-Kanallı Si MOSFET Transistör, 680 mA, 25 V, 3-Pinli SOT-23
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
680 mA
Maksimum Tahliye Kaynağı Gerilimi
25 V
Paket Tipi
SOT-23
Montaj Tipi
Yüzeye Monte
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
450 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
0.65V
Maksimum Güç Kaybı
350 mW
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
+8 V
Yonga Başına Eleman Sayısı
1
Genişlik
1.3mm
Uzunluk
2.92mm
Vgs'de Tipik Kapak Şarjı
4,5 V'de 1,64 nC
Transistör Malzemesi
Si
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
0.93mm
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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446,60 TL
4,466 TL Each (In a Pack of 100) (KDV Hariç)
535,92 TL
5,359 TL Each (In a Pack of 100) KDV Dahil
Standart
100
446,60 TL
4,466 TL Each (In a Pack of 100) (KDV Hariç)
535,92 TL
5,359 TL Each (In a Pack of 100) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
100
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 100 - 400 | 4,466 TL | 446,60 TL |
| 500 - 900 | 3,886 TL | 388,60 TL |
| 1000+ | 3,364 TL | 336,40 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
680 mA
Maksimum Tahliye Kaynağı Gerilimi
25 V
Paket Tipi
SOT-23
Montaj Tipi
Yüzeye Monte
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
450 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
0.65V
Maksimum Güç Kaybı
350 mW
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
+8 V
Yonga Başına Eleman Sayısı
1
Genişlik
1.3mm
Uzunluk
2.92mm
Vgs'de Tipik Kapak Şarjı
4,5 V'de 1,64 nC
Transistör Malzemesi
Si
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
0.93mm
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products