ON Semiconductor FDY1002PZ İkili P-Kanallı Si MOSFET Transistör, 830 mA, 20 V, 6-Pinli SOT-523 (SC-89)

RS Stok Numarası: 807-0713Marka: onsemiÜretici Parça Numarası: FDY1002PZ
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

830 mA

Maksimum Tahliye Kaynağı Gerilimi

20 V

Paket Tipi

SOT-523 (SC-89)

Montaj Tipi

Yüzeye Monte

Pim Sayısı

6

Maksimum Tahliye Kaynağı Direnci

1.8 Ω

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

625 mW

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-8 V, +8 V

Maksimum Çalışma Sıcaklığı

+150°C

Uzunluk

1.7mm

Yonga Başına Eleman Sayısı

2

Vgs'de Tipik Kapak Şarjı

4,5 V'de 2,2 nC

Genişlik

1.2mm

Transistör Malzemesi

Si

Minimum Çalışma Sıcaklığı

-55°C

Seri

PowerTrench

Yükseklik

0.6mm

Ürün Ayrıntıları

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Stok bilgileri geçici olarak kullanılamıyor.

15,91 TL

Each (In a Pack of 25) KDV Hariç

19,092 TL

Each (In a Pack of 25) KDV Dahil

ON Semiconductor FDY1002PZ İkili P-Kanallı Si MOSFET Transistör, 830 mA, 20 V, 6-Pinli SOT-523 (SC-89)
Paketlenme türü seçiniz

15,91 TL

Each (In a Pack of 25) KDV Hariç

19,092 TL

Each (In a Pack of 25) KDV Dahil

ON Semiconductor FDY1002PZ İkili P-Kanallı Si MOSFET Transistör, 830 mA, 20 V, 6-Pinli SOT-523 (SC-89)
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz

Toptan Satın Al

MiktarBirim FiyatPer Paket
25 - 7515,91 TL397,75 TL
100 - 4759,976 TL249,40 TL
500 - 9759,245 TL231,12 TL
1000 - 29756,321 TL158,02 TL
3000+5,504 TL137,60 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

830 mA

Maksimum Tahliye Kaynağı Gerilimi

20 V

Paket Tipi

SOT-523 (SC-89)

Montaj Tipi

Yüzeye Monte

Pim Sayısı

6

Maksimum Tahliye Kaynağı Direnci

1.8 Ω

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

625 mW

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-8 V, +8 V

Maksimum Çalışma Sıcaklığı

+150°C

Uzunluk

1.7mm

Yonga Başına Eleman Sayısı

2

Vgs'de Tipik Kapak Şarjı

4,5 V'de 2,2 nC

Genişlik

1.2mm

Transistör Malzemesi

Si

Minimum Çalışma Sıcaklığı

-55°C

Seri

PowerTrench

Yükseklik

0.6mm

Ürün Ayrıntıları

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more