ON Semiconductor IGBT FGA20N120FTDTU, 3-Pinli TO-3PN, 1200 V, 40 A
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
40 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±25V
Paket Tipi
TO-3PN
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.8 x 5 x 18.9mm
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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220,46 TL
220,46 TL Each (KDV Hariç)
264,55 TL
264,55 TL Each KDV Dahil
Standart
1
220,46 TL
220,46 TL Each (KDV Hariç)
264,55 TL
264,55 TL Each KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
1
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat |
|---|---|
| 1 - 24 | 220,46 TL |
| 25 - 99 | 132,30 TL |
| 100 - 249 | 129,40 TL |
| 250 - 499 | 125,34 TL |
| 500+ | 122,44 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
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Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
40 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±25V
Paket Tipi
TO-3PN
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.8 x 5 x 18.9mm
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products