onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P, Through Hole
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
312 W
Paket Tipi
TO-3P
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
15.8 x 5 x 18.9mm
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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381,18 TL
190,588 TL Each (In a Pack of 2) (KDV Hariç)
457,42 TL
228,706 TL Each (In a Pack of 2) KDV Dahil
Standart
2
381,18 TL
190,588 TL Each (In a Pack of 2) (KDV Hariç)
457,42 TL
228,706 TL Each (In a Pack of 2) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
2
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 2 - 8 | 190,588 TL | 381,18 TL |
| 10 - 48 | 150,278 TL | 300,56 TL |
| 50 - 98 | 139,548 TL | 279,10 TL |
| 100 - 448 | 127,658 TL | 255,32 TL |
| 450+ | 120,988 TL | 241,98 TL |
Ideate. Create. Collaborate
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Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
312 W
Paket Tipi
TO-3P
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
15.8 x 5 x 18.9mm
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products