FGH30S130P ON Semiconductor IGBT, 60 A, 1300 V, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
60 A
Maksimum Kollektör Emitör Gerilimi
1300 V
Maksimum Kapı Emitör Gerilimi
±25V
Maksimum Güç Kaybı
500 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.87 x 4.82 x 20.82mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
238,478 TL
Each (In a Pack of 2) KDV Hariç
286,174 TL
Each (In a Pack of 2) KDV Dahil
2
238,478 TL
Each (In a Pack of 2) KDV Hariç
286,174 TL
Each (In a Pack of 2) KDV Dahil
2
Toptan Satın Al
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 2 - 8 | 238,478 TL | 476,96 TL |
| 10 - 98 | 202,143 TL | 404,29 TL |
| 100 - 248 | 162,153 TL | 324,31 TL |
| 250 - 498 | 152,478 TL | 304,96 TL |
| 500+ | 144,308 TL | 288,62 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
60 A
Maksimum Kollektör Emitör Gerilimi
1300 V
Maksimum Kapı Emitör Gerilimi
±25V
Maksimum Güç Kaybı
500 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.87 x 4.82 x 20.82mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products