ON Semiconductor IGBT FGH40N60SFDTU, 3-Pinli TO-247, 600 V, 80 A
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
80 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
290 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.6 x 4.7 x 20.6mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+150°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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3.888,90 TL
129,63 TL Each (In a Tube of 30) (KDV Hariç)
4.666,68 TL
155,556 TL Each (In a Tube of 30) KDV Dahil
30
3.888,90 TL
129,63 TL Each (In a Tube of 30) (KDV Hariç)
4.666,68 TL
155,556 TL Each (In a Tube of 30) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
30
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Tüp |
|---|---|---|
| 30 - 30 | 129,63 TL | 3.888,90 TL |
| 60 - 120 | 125,744 TL | 3.772,32 TL |
| 150 - 270 | 121,858 TL | 3.655,74 TL |
| 300+ | 116,638 TL | 3.499,14 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
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Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
80 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
290 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.6 x 4.7 x 20.6mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+150°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products