onsemi FGH60N60SMD_F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
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Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
120 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
600 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.6 x 4.7 x 20.6mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
207,131 TL
Each (In a Tube of 30) KDV Hariç
248,557 TL
Each (In a Tube of 30) KDV Dahil
30
207,131 TL
Each (In a Tube of 30) KDV Hariç
248,557 TL
Each (In a Tube of 30) KDV Dahil
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
120 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
600 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.6 x 4.7 x 20.6mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products