ON Semiconductor FQP27P06 P-Kanallı Si MOSFET Transistör, 27 A, 60 V, 3-Pinli TO-220AB
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
27 A
Maksimum Tahliye Kaynağı Gerilimi
60 V
Paket Tipi
TO-220AB
Seri
QFET
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
70 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
4V
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
120 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-25 V, +25 V
Vgs'de Tipik Kapak Şarjı
10 V'de 33 nC
Genişlik
4.7mm
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
10.1mm
Maksimum Çalışma Sıcaklığı
+175°C
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
9.4mm
Ürün Ayrıntıları
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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436,80 TL
87,36 TL Each (In a Pack of 5) (KDV Hariç)
524,16 TL
104,832 TL Each (In a Pack of 5) KDV Dahil
Standart
5
436,80 TL
87,36 TL Each (In a Pack of 5) (KDV Hariç)
524,16 TL
104,832 TL Each (In a Pack of 5) KDV Dahil
Standart
5
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
27 A
Maksimum Tahliye Kaynağı Gerilimi
60 V
Paket Tipi
TO-220AB
Seri
QFET
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
70 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
4V
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
120 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-25 V, +25 V
Vgs'de Tipik Kapak Şarjı
10 V'de 33 nC
Genişlik
4.7mm
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
10.1mm
Maksimum Çalışma Sıcaklığı
+175°C
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
9.4mm
Ürün Ayrıntıları
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products