Teknik Belgeler
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
1.200,89 TL
240,18 TL Each (Supplied in a Tube) (KDV Hariç)
1.441,07 TL
288,22 TL Each (Supplied in a Tube) KDV Dahil
5

1.200,89 TL
240,18 TL Each (Supplied in a Tube) (KDV Hariç)
1.441,07 TL
288,22 TL Each (Supplied in a Tube) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
5

Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat |
|---|---|
| 5 - 9 | 240,18 TL |
| 10 - 14 | 234,96 TL |
| 15 - 19 | 228,00 TL |
| 20+ | 223,36 TL |
Teknik Belgeler
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


