ISL9V2040D3ST ON Semiconductor IGBT, 10 A, 450 V, 3-Pinli DPAK (TO-252)
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
10 A
Maksimum Kollektör Emitör Gerilimi
450 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
130 W
Paket Tipi
DPAK (TO-252)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
6.73 x 6.22 x 2.39mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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551,00 TL
110,20 TL Each (In a Pack of 5) (KDV Hariç)
661,20 TL
132,24 TL Each (In a Pack of 5) KDV Dahil
Standart
5
551,00 TL
110,20 TL Each (In a Pack of 5) (KDV Hariç)
661,20 TL
132,24 TL Each (In a Pack of 5) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
5
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 5 - 5 | 110,20 TL | 551,00 TL |
| 10 - 95 | 107,068 TL | 535,34 TL |
| 100 - 245 | 104,632 TL | 523,16 TL |
| 250 - 495 | 101,732 TL | 508,66 TL |
| 500+ | 99,644 TL | 498,22 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
10 A
Maksimum Kollektör Emitör Gerilimi
450 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
130 W
Paket Tipi
DPAK (TO-252)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
6.73 x 6.22 x 2.39mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products