ON Semiconductor NGTB35N65FL2WG IGBT, 650 V, 70 A, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
70 A
Maksimum Kollektör Emitör Gerilimi
650 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
300 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
16.26 x 5.3 x 21.08mm
Maksimum Çalışma Sıcaklığı
+175°C
Minimum Çalışma Sıcaklığı
-55°C
Menşe
China
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
144,91 TL
Each (In a Tube of 30) KDV Hariç
173,892 TL
Each (In a Tube of 30) KDV Dahil
30
144,91 TL
Each (In a Tube of 30) KDV Hariç
173,892 TL
Each (In a Tube of 30) KDV Dahil
30
Toptan Satın Al
| Miktar | Birim Fiyat | Per Tüp |
|---|---|---|
| 30 - 90 | 144,91 TL | 4.347,30 TL |
| 120 - 240 | 115,498 TL | 3.464,94 TL |
| 270 - 480 | 109,435 TL | 3.283,05 TL |
| 510 - 990 | 103,458 TL | 3.103,74 TL |
| 1020+ | 91,504 TL | 2.745,12 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
70 A
Maksimum Kollektör Emitör Gerilimi
650 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
300 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
16.26 x 5.3 x 21.08mm
Maksimum Çalışma Sıcaklığı
+175°C
Minimum Çalışma Sıcaklığı
-55°C
Menşe
China
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products