ON Semiconductor NGTB40N120FL3WG IGBT, 1200 V, 160 A, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
160 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
454 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
16.25 x 5.3 x 21.4mm
Minimum Çalışma Sıcaklığı
-55°C
Kapı Kapasitansı
4912pF
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
208,593 TL
Each (In a Pack of 2) KDV Hariç
250,312 TL
Each (In a Pack of 2) KDV Dahil
2
208,593 TL
Each (In a Pack of 2) KDV Hariç
250,312 TL
Each (In a Pack of 2) KDV Dahil
2
Toptan Satın Al
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 2 - 8 | 208,593 TL | 417,19 TL |
| 10 - 98 | 176,988 TL | 353,98 TL |
| 100 - 248 | 141,943 TL | 283,89 TL |
| 250 - 498 | 133,558 TL | 267,12 TL |
| 500+ | 126,248 TL | 252,50 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiMaksimum Sürekli Kollektör Akımı
160 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
454 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
16.25 x 5.3 x 21.4mm
Minimum Çalışma Sıcaklığı
-55°C
Kapı Kapasitansı
4912pF
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products