ON Semiconductor RFP70N06 N-Kanallı Si MOSFET Transistör, 70 A, 60 V, 3-Pinli TO-220AB
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
70 A
Maksimum Tahliye Kaynağı Gerilimi
60 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
14 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
150 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
20 V'de 120 nC
Genişlik
4.83mm
Maksimum Çalışma Sıcaklığı
+175°C
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
10.67mm
Yükseklik
9.4mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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91,00 TL
91,00 TL Each (KDV Hariç)
109,20 TL
109,20 TL Each KDV Dahil
Standart
1
91,00 TL
91,00 TL Each (KDV Hariç)
109,20 TL
109,20 TL Each KDV Dahil
Standart
1
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
| Miktar | Birim Fiyat |
|---|---|
| 1 - 9 | 91,00 TL |
| 10+ | 78,52 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
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Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
70 A
Maksimum Tahliye Kaynağı Gerilimi
60 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
14 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
150 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
20 V'de 120 nC
Genişlik
4.83mm
Maksimum Çalışma Sıcaklığı
+175°C
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
10.67mm
Yükseklik
9.4mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products