Teknik Belgeler
Özellikler
Minimum Çalışma Sıcaklığı
-50°C
Maximum Switching Power AC
1.25 kVA
Maksimum Çalışma Sıcaklığı
+70°C
Anahtarlama Akımı
5A
Bobin - Kontak İzolasyonu
2kV rms
Maximum Switching Voltage AC
250V ac
Kontak Malzemesi
Altın Kaplamalı
Bobin Gerilimi
24V dc
Montaj Tipi
PCB Montajı
Terminal Tipi
Açık Delikli
Kontak Yapılandırması
4PDT
Uzunluk
20.8mm
Ömür
100000000 (DC Mechanical) cycles, 200000 (Electrical) cycles, 50000000 (AC Mechanical) cycles
Derinlik
27.2mm
Bobin Gücü
900mW
Yükseklik
35.2mm
Bobin Direnci
650 <ohm/>
Marka
PanasonicMenşe
Japan
Ürün Ayrıntıları
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
372,449 TL
Each (In a Box of 20) KDV Hariç
446,939 TL
Each (In a Box of 20) KDV Dahil
20
372,449 TL
Each (In a Box of 20) KDV Hariç
446,939 TL
Each (In a Box of 20) KDV Dahil
20
Teknik Belgeler
Özellikler
Minimum Çalışma Sıcaklığı
-50°C
Maximum Switching Power AC
1.25 kVA
Maksimum Çalışma Sıcaklığı
+70°C
Anahtarlama Akımı
5A
Bobin - Kontak İzolasyonu
2kV rms
Maximum Switching Voltage AC
250V ac
Kontak Malzemesi
Altın Kaplamalı
Bobin Gerilimi
24V dc
Montaj Tipi
PCB Montajı
Terminal Tipi
Açık Delikli
Kontak Yapılandırması
4PDT
Uzunluk
20.8mm
Ömür
100000000 (DC Mechanical) cycles, 200000 (Electrical) cycles, 50000000 (AC Mechanical) cycles
Derinlik
27.2mm
Bobin Gücü
900mW
Yükseklik
35.2mm
Bobin Direnci
650 <ohm/>
Marka
PanasonicMenşe
Japan
Ürün Ayrıntıları
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.