Semikron SEMiX303GB12E4p IGBT Transistör Modülü SEMiX®3p, Seri, maks. 469 A, 1200 V, Geçirmeli Montaj
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Özellikler
Marka
Semikron DanfossMaksimum Sürekli Kollektör Akımı
469 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
20V
Yapılandırma
Seri
Paket Tipi
SEMiX®3p
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
11
Transistör Yapılandırması
Seri
Maksimum Çalışma Sıcaklığı
+175°C
Boyutlar
150 x 62.4 x 17mm
Minimum Çalışma Sıcaklığı
-40°C
Genişlik
62.4mm
Ürün Ayrıntıları
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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12.619,06 TL
12.619,06 TL Each (KDV Hariç)
15.142,87 TL
15.142,87 TL Each KDV Dahil
1
12.619,06 TL
12.619,06 TL Each (KDV Hariç)
15.142,87 TL
15.142,87 TL Each KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
1
Stok bilgileri geçici olarak kullanılamıyor.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
Semikron DanfossMaksimum Sürekli Kollektör Akımı
469 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
20V
Yapılandırma
Seri
Paket Tipi
SEMiX®3p
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
11
Transistör Yapılandırması
Seri
Maksimum Çalışma Sıcaklığı
+175°C
Boyutlar
150 x 62.4 x 17mm
Minimum Çalışma Sıcaklığı
-40°C
Genişlik
62.4mm
Ürün Ayrıntıları
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products