STMicroelectronics STGW20NC60VD IGBT, 600 V, 60 A, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
STMicroelectronicsMaksimum Sürekli Kollektör Akımı
60 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.75 x 5.15 x 20.15mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+150°C
Ürün Ayrıntıları
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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3.112,20 TL
103,74 TL Each (In a Tube of 30) (KDV Hariç)
3.734,64 TL
124,488 TL Each (In a Tube of 30) KDV Dahil
30
3.112,20 TL
103,74 TL Each (In a Tube of 30) (KDV Hariç)
3.734,64 TL
124,488 TL Each (In a Tube of 30) KDV Dahil
30
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
| Miktar | Birim Fiyat | Per Tüp |
|---|---|---|
| 30 - 60 | 103,74 TL | 3.112,20 TL |
| 90 - 480 | 96,843 TL | 2.905,29 TL |
| 510 - 960 | 94,335 TL | 2.830,05 TL |
| 990+ | 91,998 TL | 2.759,94 TL |
Ideate. Create. Collaborate
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Teknik Belgeler
Özellikler
Marka
STMicroelectronicsMaksimum Sürekli Kollektör Akımı
60 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
15.75 x 5.15 x 20.15mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+150°C
Ürün Ayrıntıları
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products