STMicroelectronics STGW80H65DFB IGBT, 650 V, 120 A, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
STMicroelectronicsÜrün Tipi
IGBT
Maksimum Kollektör Emitör Gerilimi (Vceo)
650V
Maksimum Güç Kaybı (Pd)
469W
Paket Tipi
TO-247
Montaj Tipi
Deliğe Takılan
İletken Tipi
N Tipi
Pim Sayısı
3
Maksimum Kapı Emitör Gerilimi (VGEO)
±20 V
Maksimum Kollektör Emitör Doygunluk Gerilimi (Vce(SAT))
2V
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
175°C
Yükseklik
20.15mm
Standartlar/Onaylar
Lead (Pb) Free package, ECOPACK
Seri
H
Otomotiv Standardı
NO
Menşe
China
Ürün Ayrıntıları
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
9.162,36 TL
305,412 TL Each (In a Tube of 30) (KDV Hariç)
10.994,83 TL
366,494 TL Each (In a Tube of 30) KDV Dahil
30
9.162,36 TL
305,412 TL Each (In a Tube of 30) (KDV Hariç)
10.994,83 TL
366,494 TL Each (In a Tube of 30) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
30
Ideate. Create. Collaborate
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No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
STMicroelectronicsÜrün Tipi
IGBT
Maksimum Kollektör Emitör Gerilimi (Vceo)
650V
Maksimum Güç Kaybı (Pd)
469W
Paket Tipi
TO-247
Montaj Tipi
Deliğe Takılan
İletken Tipi
N Tipi
Pim Sayısı
3
Maksimum Kapı Emitör Gerilimi (VGEO)
±20 V
Maksimum Kollektör Emitör Doygunluk Gerilimi (Vce(SAT))
2V
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
175°C
Yükseklik
20.15mm
Standartlar/Onaylar
Lead (Pb) Free package, ECOPACK
Seri
H
Otomotiv Standardı
NO
Menşe
China
Ürün Ayrıntıları
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products