Teknik Belgeler
Özellikler
Marka
VishayMaksimum Sürekli Kollektör Akımı
108 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
390 W
Paket Tipi
INT-A-PAK
Yapılandırma
Seri
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
7
Anahtarlama Hızı
8 → 60kHz
Transistör Yapılandırması
Seri
Boyutlar
94 x 35 x 28mm
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-40°C
Menşe
Italy
Ürün Ayrıntıları
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
2.878,205 TL
Each (In a Tray of 15) KDV Hariç
3.453,846 TL
Each (In a Tray of 15) KDV Dahil
15
2.878,205 TL
Each (In a Tray of 15) KDV Hariç
3.453,846 TL
Each (In a Tray of 15) KDV Dahil
15
Teknik Belgeler
Özellikler
Marka
VishayMaksimum Sürekli Kollektör Akımı
108 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
390 W
Paket Tipi
INT-A-PAK
Yapılandırma
Seri
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
7
Anahtarlama Hızı
8 → 60kHz
Transistör Yapılandırması
Seri
Boyutlar
94 x 35 x 28mm
Maksimum Çalışma Sıcaklığı
+150°C
Minimum Çalışma Sıcaklığı
-40°C
Menşe
Italy
Ürün Ayrıntıları
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.