Teknik Belgeler
Özellikler
Marka
VishayMaksimum Sürekli Kollektör Akımı
288 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
1.09 kW
Paket Tipi
SOT-227
Montaj Tipi
Panel Montajı
İletken Tipi
N
Pim Sayısı
4
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
38.3 x 25.7 x 12.3mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+150°C
Menşe
Philippines
Ürün Ayrıntıları
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Teknik Belgeler
Özellikler
Marka
VishayMaksimum Sürekli Kollektör Akımı
288 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
1.09 kW
Paket Tipi
SOT-227
Montaj Tipi
Panel Montajı
İletken Tipi
N
Pim Sayısı
4
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
38.3 x 25.7 x 12.3mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+150°C
Menşe
Philippines
Ürün Ayrıntıları
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.