BALLUFF, M8 x 1, PNP-NO Inductive Sensor 60mm Length, 12 → 30 V dc supply voltage , IP67 Rating
Teknik Belgeler
Özellikler
Gövde Stili
Silindir
Ters Polarite Koruması
Yes
Kısa Devre Aşırı Yük Koruması
Yes
HMI ile Kullanım İçin
X2
Koruma
Korumalı
Maksimum Anahtarlama Frekansı
1kHz
Diş Boyutu
M8 x 1
Maksimum DC Gerilim
30V
Minimum Çalışma Sıcaklığı
-25°C
Maksimum Çalışma Sıcaklığı
+70°C
IP Değeri
IP67
Montaj Tipi
Gömme Montaj
Muhafaza Malzemesi
CuZn
Anahtarlama Akımı
200 mA
Algılama Aralığı
1,5 mm
Marka
BALLUFFÇıkış Tipi
PNP
Terminal Tipi
M8 - 3 Pimli
Uzunluk
60mm
Besleme Gerilimi
12 → 30 V dc
Menşe
Hungary
Ürün Ayrıntıları
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
P.O.A.
1
P.O.A.
1
Teknik Belgeler
Özellikler
Gövde Stili
Silindir
Ters Polarite Koruması
Yes
Kısa Devre Aşırı Yük Koruması
Yes
HMI ile Kullanım İçin
X2
Koruma
Korumalı
Maksimum Anahtarlama Frekansı
1kHz
Diş Boyutu
M8 x 1
Maksimum DC Gerilim
30V
Minimum Çalışma Sıcaklığı
-25°C
Maksimum Çalışma Sıcaklığı
+70°C
IP Değeri
IP67
Montaj Tipi
Gömme Montaj
Muhafaza Malzemesi
CuZn
Anahtarlama Akımı
200 mA
Algılama Aralığı
1,5 mm
Marka
BALLUFFÇıkış Tipi
PNP
Terminal Tipi
M8 - 3 Pimli
Uzunluk
60mm
Besleme Gerilimi
12 → 30 V dc
Menşe
Hungary
Ürün Ayrıntıları
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.