Infineon IGW40N65F5FKSA1 IGBT, 650 V, 40 A, 3-Pinli TO-247
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Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
40 A
Maksimum Kollektör Emitör Gerilimi
650 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
250 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
2500pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
0.46mJ
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
137,24 TL
Each (In a Pack of 4) (KDV Hariç)
164,688 TL
Each (In a Pack of 4) KDV Dahil
Standart
4
137,24 TL
Each (In a Pack of 4) (KDV Hariç)
164,688 TL
Each (In a Pack of 4) KDV Dahil
Standart
4
Toptan Satın Al
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 4 - 16 | 137,24 TL | 548,96 TL |
| 20 - 36 | 123,516 TL | 494,06 TL |
| 40 - 96 | 115,291 TL | 461,16 TL |
| 100 - 196 | 107,066 TL | 428,26 TL |
| 200+ | 100,251 TL | 401,00 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
40 A
Maksimum Kollektör Emitör Gerilimi
650 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
250 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
2500pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
0.46mJ
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products