Teknik Belgeler
Özellikler
Brand
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.08mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Ürün Ayrıntıları
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
2.418,00 TL
24,18 TL Each (Supplied in a Bag) (KDV Hariç)
2.901,60 TL
29,016 TL Each (Supplied in a Bag) KDV Dahil
Üretime Uygun Paketleme (Bag)
100
2.418,00 TL
24,18 TL Each (Supplied in a Bag) (KDV Hariç)
2.901,60 TL
29,016 TL Each (Supplied in a Bag) KDV Dahil
Üretime Uygun Paketleme (Bag)
100
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Teknik Belgeler
Özellikler
Brand
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.08mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Ürün Ayrıntıları
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.