Teknik Belgeler
Özellikler
Marka
STMicroelectronicsÜrün Tipi
Kapı Sürücü Modülü
Güç Yönetimi İşlevi
Half-Bridge Driver
Şununla Birlikte Kullanım İçin
N Channel MOSFETs
Kit Sınıflandırması
Modül
Öne Çıkan Cihaz
L99MH98
Kit Adı
Automotive Octal Half-bridge Pre-driver
Standartlar/Onaylar
RoHS Compliant, ASIL-B safety integrity level, ISO26262 compliant
Ürün Ayrıntıları
The STMicroelectronics Integrated Octal Half bridge pre driver dedicated to control up to sixteen N-channel MOSFETs. It is intended for DC motor control applications such as automotive power seat control or other applications. A 24 bit serial peripheral interface is used for configuring and controlling the eight half-bridges or four H‑bridge. SPI status registers provide high level diagnostic information such as supply voltage monitoring, the charge pump voltage monitoring, temperature warning and over temperature shutdown. Each gate driver monitors independently its external MOSFET drain source voltage for fault conditions.
Stok bilgileri geçici olarak kullanılamıyor.
Teklif İsteyiniz
1
Teklif İsteyiniz
Stok bilgileri geçici olarak kullanılamıyor.
1
Teknik Belgeler
Özellikler
Marka
STMicroelectronicsÜrün Tipi
Kapı Sürücü Modülü
Güç Yönetimi İşlevi
Half-Bridge Driver
Şununla Birlikte Kullanım İçin
N Channel MOSFETs
Kit Sınıflandırması
Modül
Öne Çıkan Cihaz
L99MH98
Kit Adı
Automotive Octal Half-bridge Pre-driver
Standartlar/Onaylar
RoHS Compliant, ASIL-B safety integrity level, ISO26262 compliant
Ürün Ayrıntıları
The STMicroelectronics Integrated Octal Half bridge pre driver dedicated to control up to sixteen N-channel MOSFETs. It is intended for DC motor control applications such as automotive power seat control or other applications. A 24 bit serial peripheral interface is used for configuring and controlling the eight half-bridges or four H‑bridge. SPI status registers provide high level diagnostic information such as supply voltage monitoring, the charge pump voltage monitoring, temperature warning and over temperature shutdown. Each gate driver monitors independently its external MOSFET drain source voltage for fault conditions.