IXYS IXGH30N120B3D1 IGBT, 1200 V, 50 A, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
IXYSMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
Pim Sayısı
3
Transistör Yapılandırması
Tek
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+150°C
Ürün Ayrıntıları
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
393,36 TL
Each KDV Hariç
472,03 TL
Each KDV Dahil
1
393,36 TL
Each KDV Hariç
472,03 TL
Each KDV Dahil
1
Toptan Satın Al
| Miktar | Birim Fiyat |
|---|---|
| 1 - 9 | 393,36 TL |
| 10+ | 342,62 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
IXYSMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
Pim Sayısı
3
Transistör Yapılandırması
Tek
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+150°C
Ürün Ayrıntıları
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products