Teknik Belgeler
Özellikler
Marka
STMicroelectronicsÜrün Tipi
MOSFET
İletken Tipi
N Tipi
Maksimum Sürekli Tahliye Akımı (Id)
7A
Maksimum Tahliye Kaynağı Gerilimi (Vds)
65V
Seri
PD5
Paket Tipi
PowerSO-10RF
Montaj Tipi
Yüzey
Pim Sayısı
10
Maksimum Tahliye Kaynak Direnci (Rds)
0.76Ω
Kanal Modu
Artırma
Maksimum Kapı Kaynak Gerilimi (Vgs)
20 V
Maksimum Güç Kaybı (Pd)
79W
Minimum Çalışma Sıcaklığı
65°C
Maksimum Çalışma Sıcaklığı
165°C
Standartlar/Onaylar
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Genişlik
9.6 mm
Uzunluk
14.35mm
Yükseklik
3.6mm
Otomotiv Standardı
NO
Menşe
Malaysia
Ürün Ayrıntıları
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
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Stok bilgileri geçici olarak kullanılamıyor.
4.027,32 TL
4.027,32 TL Each (KDV Hariç)
4.832,78 TL
4.832,78 TL Each KDV Dahil
1
4.027,32 TL
4.027,32 TL Each (KDV Hariç)
4.832,78 TL
4.832,78 TL Each KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
1
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Teknik Belgeler
Özellikler
Marka
STMicroelectronicsÜrün Tipi
MOSFET
İletken Tipi
N Tipi
Maksimum Sürekli Tahliye Akımı (Id)
7A
Maksimum Tahliye Kaynağı Gerilimi (Vds)
65V
Seri
PD5
Paket Tipi
PowerSO-10RF
Montaj Tipi
Yüzey
Pim Sayısı
10
Maksimum Tahliye Kaynak Direnci (Rds)
0.76Ω
Kanal Modu
Artırma
Maksimum Kapı Kaynak Gerilimi (Vgs)
20 V
Maksimum Güç Kaybı (Pd)
79W
Minimum Çalışma Sıcaklığı
65°C
Maksimum Çalışma Sıcaklığı
165°C
Standartlar/Onaylar
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Genişlik
9.6 mm
Uzunluk
14.35mm
Yükseklik
3.6mm
Otomotiv Standardı
NO
Menşe
Malaysia
Ürün Ayrıntıları
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
