STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin TO-263

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance